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The 850 EVO delivers guaranteed endurance and reliability by doubling the Total Bytes Written (TBW)
ompared to the previous generation of 840 EVO* along with an industry-leading 5 year warranty.
Through improving performance by up to 30%, the 850 EVO allows sustained performance**
making it one of the most dependable storage solutions.
* TBW: 43 (840 EVO) < 75 (850 EVO 120/250GB), 150 (850 EVO 500/1TB)
** Sustained Performance (250GB) : 3300 IOPS (840 EVO) < 6500 IOPS (850 EVO),
Performance measured after 12 hours "Random Write" test
Samsung's unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming
the density limitations, performance and endurance of today's conventional planar NAND architecture.
3D V-NAND stacks 32 cell layers vertically over one another rather than decreasing cell dimensions
and trying to fit itself onto a fixed horizontal space. As a result, the technology provides higher density
and better performance utilizing a smaller footprint.
The 840 EVO introduced the 2mW device sleep mode feature in the 840 EVO, and now
the 850 EVO is introducing
cutting-edge 3D V-NAND Technology
(which consumes 50% less energy than Planar 2D NAND),
giving you 25% more power efficiency during write operations*.
* Power (250GB): 3.2 Watt (840 EVO) > 2.4 Watt (850 EVO)
Achieve ultimate read/write performance to maximize your everyday computing experience
with Samsung's TurboWrite technology. Compared to the 840 EVO, the 850 EVO shows an
increased overall user experience of approximately 13%*, partly thanks to the now 2x faster
random write speeds** The 850 EVO delivers top-notch performance in its class, with sequential
read and write speeds of 540MB/s and 520MB/s, respectively. Enjoy optimized random performance
in all Queue Depths (QD) for client PC usage scenarios
* PCmark7 (250GB): 6700 (840 EVO) < 7600 (850 EVO)
** Random Write (QD32,120GB) : 36,000 IOPS (840 EVO) < 88,000 IOPS (850 EVO)
The versatile 850 EVO has you covered no matter which connector type or physical slot size
your device supports, making it perfect for today's desktops, laptops, and especially
ultra-thin space-constrained tablet PCs.
The Samsung 850 EVO mSATA is a speed machine. With the latest Samsung Magician
software, you can activate the RAPID mode to tap unused PC memory (DRAM) and use it as
cache storage up to 25% of the total DRAM capacity. With the dramatic increase in storage,
data processing speeds and random QD can be up to 2x faster* under the RAPID mode.
* PCMARK7 RAW (250GB): 7500 < 15000 (RAPID mode)
All prices reflect the final price after savings/rebate(s).