Learn more about the SAMSUNG MZ-V9V1T0B/AM
Model| Brand | SAMSUNG |
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| Series | 990 |
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| Model | MZ-V9V1T0B/AM |
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| Device Type | Internal Solid State Drive (SSD) |
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| Used For | Consumer |
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Details| Form Factor | M.2 2280 |
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| Capacity | 1TB |
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| Memory Components | Samsung V NAND |
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| Interface | PCI-Express 4.0 x4 |
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| Protocol | NVMe 2.0 |
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| Controller | In-House Controller |
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| Cache | HMB (Host Memory Buffer) |
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| Encryption | Class 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667) |
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Performance| Max Sequential Read | Up to 7150 MBps |
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| Max Sequential Write | Up to 6450 MBps |
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| 4KB Random Read | Up to 700,000 IOPS |
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| 4KB Random Write | Up to 1,100,000 IOPS |
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| Terabytes Written (TBW) | 400TB |
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Environmental| Power Consumption (Idle) | PS3 APST on / PS4 L1.2: Typical 55mW / Typical 3mW |
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| Power Consumption (Active) | Read/Write, Average: 4.0W / 3.7W |
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Dimensions & Weight| Height | 2.38mm |
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| Width | 22.15mm |
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| Depth | 80.15mm |
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| Weight | 6g |
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Additional Information| First Listed on Newegg | July 14, 2026 |
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Customer Reviews of the SAMSUNG MZ-V9V1T0B/AM