Learn more about the SAMSUNG MZ-75E4T0B/AM
Model| Brand | SAMSUNG |
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| Series | 850 EVO |
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| Model | MZ-75E4T0B/AM |
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| Device Type | Internal Solid State Drive (SSD) |
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| Used For | Consumer |
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Details| Form Factor | 2.5" |
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| Capacity | 4TB |
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| Memory Components | 3D NAND |
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| Interface | SATA III |
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| Controller | MHX |
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| Cache | 4GB DRAM |
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Performance| Max Sequential Read | Up to 540 MBps |
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| Max Sequential Write | Up to 520 MBps |
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| 4KB Random Read | Up to 10,000 IOPS (QD1) Up to 98,000 IOPS (QD32) |
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| 4KB Random Write | Up to 40,000 IOPS (QD1) Up to 90,000 IOPS (QD32) |
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| MTBF | 1,500,000 hours |
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Environmental| Power Consumption (Idle) | 70mW |
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| Power Consumption (Active) | 3.1W/3.6W (Read/Write) |
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| Operating Temperature | 0°C ~ +70°C |
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| Storage Temperature | -40°C ~ +85°C |
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| Operating Humidity | 5% to 95% RH |
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| Max Shock Resistance | Non-Operating: 1500G, duration 0.5m sec, 3 axis |
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| Max Vibration Resistance | Non-Operating: 20~2000Hz, 20G |
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Dimensions & Weight| Height | 6.80mm |
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| Width | 69.85mm |
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| Depth | 100.00mm |
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| Weight | 55.00g |
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Manufacturer Warranty| Parts | 3 Years |
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| Labor | 3 Years |
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Additional Information| First Listed on Newegg | December 02, 2019 |
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Customer Reviews of the SAMSUNG MZ-75E4T0B/AM