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SAMSUNG Internal SSDs - Showing 97 - 120 of 193 Products
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Max Sequential Read: Up to 550 MBps
Max Sequential Write: Up to 520 MBps
4KB Random Read: Random (QD1): Up to 10,000 IOPS
Random (QD32): Up to 98,000 IOPS
Controller: Samsung MJX
Form Factor: 2.5"
Capacity: 250GB
Interface: SATA III
4KB Random Write: Random (QD1): Up to 42,000 IOPS
Random (QD32): Up to 90,000 IOPS
Model #: MZ-76E250B/AM
Item #: 9SIV0U87AN6694
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Max Sequential Read: Up to 560 MBps
Max Sequential Write: Up to 530 MBps
4KB Random Read: Up to 98,000 IOPS
Controller: Samsung MKX Controller
4KB Random Write: Up to 88,000 IOPS
Power Consumption (Active): 3.2 W
Power Consumption (Idle): 35 mW
Max Shock Resistance: 1500G
Model #: MZ-77Q4T0BW
Item #: 9SIV05ZDSK2582
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Brand: SAMSUNG
Device Type: Computer Accessories
Weight: 2.0000
Model #: MZ-V9P1T0GW
Item #: 9SIV05ZKGZ5944
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Max Sequential Read: Up to 7450 MBps
Max Sequential Write: Up to 6900 MBps
Controller: Samsung
Form Factor: M.2 2280
Capacity: 2TB
Interface: PCI-Express Gen 4.0 x4, NVMe 2.0
Brand: SAMSUNG
Series: 990 PRO w/ Heatsink Gaming Package
Model #: MZ-V9P2T0G
Item #: 9SIV0U8KNH2314
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Max Sequential Read: Up to 3500 MBps
Max Sequential Write: Up to 3000 MBps
4KB Random Read: QD1: 17,000 IOPS
QD32: 500,000 IOPS
Controller: Pablo
4KB Random Write: QD1: 54,000 IOPS
QD32: 480,000 IOPS
Power Consumption (Active): Average: 4.6W
Maximum: 5.3W (Burst mode)
Power Consumption (Idle): 45 mW
Max Shock Resistance: 1,500G & 0.5 ms (Half sine)
Model #: MZ-V8V1T0BW
Item #: 9SIV05ZFC72427
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Max Sequential Write: 6300
Connector: PCIe
Form Factor: M.2
Capacity: 5.3 cubic_feet
Interface: pci_express_x4
Power Consumption (Active): 50 watts
Brand: SAMSUNG
Series: 990 EVO Plus
Model #: MZ-V9S4T0BW
Item #: 9SIV05ZKFD5660
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Max Sequential Read: Up to 560 MBps
Max Sequential Write: Up to 530 MBps
Form Factor: 2.5"
Capacity: 250GB
Interface: SATA III
Power Consumption (Active): Average: 2.2W
Maximum: 3.5W
Power Consumption (Idle): Max. 30 mW
Max Shock Resistance: 1500G
Model #: MZ-77E250B/AM
Item #: 9SIV05ZDR65649
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Max Sequential Read: Up to 3400 MBps
Max Sequential Write: Up to 1500 MBps
4KB Random Read: QD32: Up to 200,000 IOPS
QD1: Up to 15,000 IOPS
Controller: Samsung Phoenix Controller
Form Factor: M.2 2280
Capacity: 250GB
Interface: PCIe Gen3. X4, NVMe 1.3
4KB Random Write: QD32: Up to 350,000 IOPS
QD1: Up to 50,000 IOPS
Model #: MZ-V7E250BW
Item #: 9SIV0U89MB7121
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Max Sequential Read: Up to 540 MBps
Max Sequential Write: Up to 500 MBps
4KB Random Read: Up to 97,000 IOPS
Controller: MGX
Form Factor: M.2 2280
Capacity: 120GB
Interface: SATA III
4KB Random Write: Up to 89,000 IOPS
Model #: MZ-N5E120BW
Item #: 9SIV0U8BSD2337
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Max Sequential Read: Up to 540MB/s
Max Sequential Write: Up to 520MB/s
4KB Random Read: Up to 97,000 IOPS
Controller: Samsung MEX Controller
Form Factor: mSATA
Capacity: 250GB
Interface: SATA III
4KB Random Write: Up to 66,000 IOPS
Model #: MZ-MTE250BW
Item #: 9SIV0U84DP4987
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Max Sequential Read: Up to 550 MBps
Max Sequential Write: Up to 520 MBps
4KB Random Read: QD32: Up to 97,000 IOPS
QD1: Up to 10,000 IOPS
Controller: Samsung MJX
Form Factor: mSATA
Capacity: 500GB
Interface: SATA III
4KB Random Write: QD32: Up to 88,000 IOPS
QD1: Up to 42,000 IOPS
Model #: MZ-M6E500BW
Item #: 9SIV0U87011378
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Max Sequential Read: Up to 3500 MBps
Max Sequential Write: Up to 2700 MBps
4KB Random Read: QD32: 500,000 IOPS
QD1: 15,000 IOPS
Controller: Samsung Phoenix
4KB Random Write: QD32: 500,000 IOPS
QD1: 55,000 IOPS
Power Consumption (Active): Average: 5.2W / Maximum: 8.5W (Burst mode)
Power Consumption (Idle): 30 mW (max)
Max Shock Resistance: 1,500G & 0.5 ms (Half sine)
Model #: MZ-V7P1T0E
Item #: 9SIV0U8C1C2288
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4KB Random Read: Up to 85,000 IOPS
Controller: Samsung
MDX
Controller
Form Factor: 2.5"
Capacity: 120GB
Interface: SATA III
Sustained Sequential Read: 530MBps
Sustained Sequential Write: 130MBps
4KB Random Write: Up to 32,000 IOPS
Model #: MZ-7TD120KW
Item #: 9SIV0U85W40660
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Max Sequential Read: Up to 2200 MBps
Max Sequential Write: Up to 900 MBps
4KB Random Read: Up to 270,000 IOPS (4KB, QD32)
Up to 11,000 IOPS (4KB, QD1)
Controller: Samsung UBX controller
Form Factor: M.2 2280
Capacity: 256GB
Interface: PCI-Express 3.0 x4
4KB Random Write: Up to 85,000 IOPS (4KB, QD32)
Up to 43,000 IOPS (4KB, QD1)
Model #: MZ-V5P256BW
Item #: 9SIV0U85P13161
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Max Sequential Read: Up to 540 MBps
Max Sequential Write: Up to 520 MBps
4KB Random Read: Up to 98,000 IOPS (4KB, QD32)
Up to 10,000 IOPS (4KB, QD1)
Controller: Samsung MGX Controller
Form Factor: 2.5"
Capacity: 1TB
Interface: SATA-6GBPS
4KB Random Write: Up to 90,000 IOPS (4KB, QD32)
Up to 40,000 IOPS (4KB, QD1)
Model #: MZ-75E1T0E
Item #: 9SIV0U8HW37380
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Max Sequential Read: Up to 3200 MBps
Max Sequential Write: Up to 1500 MBps
4KB Random Read: Up to 330,000 IOPS (4KB, QD32)
Up to 14,000 IOPS (4KB, QD1)
Controller: Samsung Polaris controller
Form Factor: M.2 2280
Capacity: 250GB
Interface: PCI-Express 3.0 x4
4KB Random Write: Up to 300,000 IOPS (4KB, QD32)
Up to 50,000 IOPS (4KB, QD1)
Model #: MZ-V6E250BW
Item #: 9SIV0U89BJ4259
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Max Sequential Read: Up to 3500 MBps
Max Sequential Write: Up to 2100 MBps
4KB Random Read: Up to 330,000 IOPS (4KB, QD32)
Up to 14,000 IOPS (4KB, QD1)
Controller: Samsung Polaris controller
Form Factor: M.2 2280
Capacity: 512GB
Interface: PCIe 3.0 x4, NVMe 1.2
4KB Random Write: Up to 330,000 IOPS (4KB, QD32)
Up to 50,000 IOPS (4KB, QD1)
Model #: MZ-V6P512BW
Item #: 9SIV0U867S4033
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Max Sequential Read: Up to 3500 MBps
Max Sequential Write: Up to 2300 MBps
4KB Random Read: QD32: 370,000 IOPS
QD1: 15,000 IOPS
Controller: Samsung Phoenix
4KB Random Write: QD32: 500,000 IOPS
QD1: 55,000 IOPS
Power Consumption (Active): Average: 5.2W / Maximum: 8.5W (Burst mode)
Power Consumption (Idle): 30 mW (max)
Max Shock Resistance: 1,500G & 0.5 ms (Half sine)
Model #: MZ-V7P512E
Item #: 9SIV0U8HC14263
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