XY-GMOS High Power MOS Tube FET Trigger Switch Driver Module PWM Conditioning Electronic Switch Control Board DC 4V-60V

This module supports high-level triggering, low-level triggering, switching control, and PWM control;; The original imported dual MOS parallel active output is used, with lower internal resistance, greater current, and strong power. It is 10A and 600W at room temperature, meeting the use of most equipment;;
Support ultra wide voltage: DC 4V~60V; Easily achieve control of high-power devices.;
Low-level trigger voltage range: DC 0V- 0.6V, trigger signal at 0V- 0.6V, MOS transistor is on; above 3.0V, MOS transistor is off; signal voltage cannot be 0.6V - 3.0V, because MOS tube is not complete Open circuit, high power output will damage MOS.;
High level trigger voltage range: DC 3.0V ~24V, that is, when the signal is 3.0V ~24V, the MOS transistor is on; If it is lower than 0.6V, that is, 0V~ 0.6V, the MOS tube is turned off, and the signal voltage must not be between 0.6V and 3.0V. In this way, the MOS is in an incomplete open state, and the MOS is burned during high-power use;